IC Packaging¶
Summary
- An IC package is the physical interface between a semiconductor die and the outside world. It protects the die, provides electrical connections, provides a path for heat to escape, and makes the device practical to assemble onto a circuit board or into a larger system.
- Package families exist because there is no single solution that simultaneously provides low cost, small size, high I/O count, high electrical performance, excellent thermal performance, easy assembly, and high reliability.
- Traditional packages generally use wire bonding or leadframes, while newer packages increasingly use flip-chip, redistribution layers (RDL), wafer-level packaging, fan-out packaging, silicon interposers, through-silicon vias (TSVs), hybrid bonding, and chiplets.
- Package names describe different aspects of construction. For example, QFN describes a leadless package outline, while flip-chip describes the die interconnection method. A device can therefore be both a flip-chip package and a BGA.
- Package technology has evolved from simple packages such as DIP and TO-style packages toward increasingly dense architectures such as WLCSP, FOWLP, 2.5D, 3D IC, HBM, and chiplet-based packages.
How IC Packages Are Classified¶
There are several ways to classify a package, and these classifications overlap.
- Through-hole — leads pass through holes in the PCB.
- Surface-mount — package is soldered directly onto PCB pads.
- Land-based — package uses flat metal lands instead of protruding leads.
- Ball-based — package uses an array of solder balls.
- Bare-die — the silicon itself is attached directly to another substrate or PCB.
- Wire bond — thin metal wires connect die pads to package leads or substrate.
- Flip chip — the die is flipped and connected through bumps.
- TAB — tape-automated bonding connects the die to a flexible tape.
- Hybrid bonding — semiconductor or package surfaces are directly bonded using fine-pitch metal/dielectric interfaces.
- Conventional packaging
- Wafer-level packaging
- Fan-in packaging
- Fan-out packaging
- Panel-level packaging
- Advanced 2.5D packaging
- 3D packaging
- Plastic / organic
- Ceramic
- Metal
- Glass
- Silicon interposer
- Organic substrate
- Flexible substrate
Through-Hole Packages¶
Through-hole packages were among the earliest mass-produced IC package families. Their leads pass through holes drilled into the PCB and are soldered on the opposite side.
They are physically larger than modern surface-mount packages, but they remain useful for prototyping, education, legacy systems, high-voltage applications, and situations where mechanical robustness matters.
Dual In-Line Package (DIP)¶
Figure 1. 0.3" wide DIP sockets with dual-wipe contacts for 16-, 14-, and 8-pin DIP ICs1
The DIP places two parallel rows of leads along the sides of a rectangular package.
It became one of the most important early IC package formats because it was inexpensive, easy to manufacture, easy to insert into a PCB, and easy to handle manually.
| Advantages | Disadvantages |
|---|---|
|
|
Table 1.
Figure 2. EPROM ICs in 0.6" wide ceramic DIP40W, DIP32W, DIP28W, DIP24W packages, also known as CDIP (Ceramic DIP)1
A ceramic version of the DIP using a ceramic body, often with a hermetic seal.
Ceramic construction provides better environmental protection and temperature performance than ordinary plastic DIP packages.
| Advantages | Disadvantages |
|---|---|
|
|
Table 2.
Figure 3. 4000-series logic ICs in 0.3" wide 14-pin plastic DIP packages (DIP14N), also known as PDIP (Plastic DIP)1
The inexpensive plastic version of the DIP.
| Advantages | Disadvantages |
|---|---|
|
|
Table 3.
Single In-Line Package (SIP or SIPP)¶
Figure 4. Two SIPP memory modules2
A package with one row of leads.
SIPs were used for memory modules, resistor networks, power devices, and various older integrated circuits.
| Advantages | Disadvantages |
|---|---|
|
|
Table 4.
Zig-Zag In-Line Package (ZIP)¶
Figure 5. A TDA2030 audio power amplifier IC in a staggered TO-220 with five leads3
A variation of an in-line package in which the leads alternate in a zig-zag arrangement.
The geometry allowed more pins without making the package excessively wide.
| Advantages | Disadvantages |
|---|---|
|
|
Table 5.
Pin Grid Array (PGA)¶
Figure 6. The pin grid array at the bottom of a prototype Motorola 68020 microprocessor4
A package with pins arranged in a two-dimensional grid on its underside.
PGAs were historically important for CPUs and other high-pin-count devices before BGA became dominant.
| Advantages | Disadvantages |
|---|---|
|
|
Table 6.
Figure 7. 133 MHz Pentium chip in a ceramic package4
A PGA constructed using ceramic materials.
| Advantages | Disadvantages |
|---|---|
|
|
Table 7.
Figure 8. The topside of a Celeron-400 in a PPGA package4
A lower-cost plastic implementation of the PGA concept.
Small-Outline Packages¶
Small-outline packages moved IC packaging from through-hole assembly toward surface-mount assembly.
They use metal leads extending from the package body and are soldered directly onto PCB pads.
Small-Outline Integrated Circuit (SOIC)¶
Figure 9. SOIC-165
A rectangular surface-mount package with gull-wing leads on two sides.
SOIC became one of the most widely used general-purpose SMT IC packages.
| Advantages | Disadvantages |
|---|---|
|
|
Table 8.
Small-Outline Package (SOP)¶
Figure 10. Small-outline package
A general family of small surface-mount packages with leads on two sides.
SOIC is one of the most common members of the broader SOP family.
Thin Small-Outline Package (TSOP)¶
Figure 11. Hynix flash memory as TSOP5
A thinner small-outline package designed for applications where vertical space is restricted.
It became particularly common in memory devices.
| Advantages | Disadvantages |
|---|---|
|
|
Table 9.
Thin Shrink Small-Outline Package (TSSOP)¶
Figure 12. Philips TDA6651TT in TSSOP package6
A smaller-pitch, thinner evolution of SOIC/SOP packaging.
| Advantages | Disadvantages |
|---|---|
|
|
Table 10.
Shrink Small-Outline Package (SSOP)¶
Figure 13. Shrink small-outline package
A smaller-pitch SOP family intended to increase pin density without moving to an area-array package.
Leaded Quad Packages¶
Quad packages place leads on all four sides of the package.
Quad Flat Package (QFP)¶
Figure 14. 304-pin plastic quad flat package (QFP) with exposed thermal pad (TP)7
A square or rectangular package with gull-wing leads extending from all four sides.
QFPs became extremely common for microcontrollers, DSPs, ASICs, and other medium-to-high I/O devices.
| Advantages | Disadvantages |
|---|---|
|
|
Table 11.
Figure 15. A Zilog Z80 in a 44-pin QFP (special case: LQFP)7
A thinner QFP variant, extremely common for microcontrollers and embedded processors.
| Advantages | Disadvantages |
|---|---|
|
|
Table 12.
Figure 18. 100-pin bumpered quad flat package (BQFP) – Cyrix Cx486SLC7
A QFP variant with molded plastic "bumpers" projecting from the corners of the package body, protecting the fragile leads from bending damage during handling and shipping. Common on older, large-pin-count QFPs before leadless and BGA alternatives became the standard higher-pin-count choice.
Quad Flat No-Lead Package (QFN)¶
Figure 19. 28-pin QFN, upside down to show contacts and thermal/ground pad8
A leadless package with electrical contacts exposed around the underside perimeter.
Many QFN packages also include a large exposed center pad connected to ground or a thermal path.
| Advantages | Disadvantages |
|---|---|
|
|
Table 13.
Dual Flat No-Lead Package (DFN)¶
Figure 20. Dual flat no-lead package
A two-sided leadless package similar in concept to QFN but with contacts primarily on two sides.
| Advantages | Disadvantages |
|---|---|
|
|
Table 14.
Leadless Packages¶
Leadless packages remove conventional protruding leads and expose contacts underneath or around the bottom of the package.
They became important because removing long leads reduces package size and parasitic inductance.
Land Grid Array (LGA)¶
Figure 21. Ceramic LGA package (top), with interposer containing conductive columns (right) and matching LGA pads on the PCB (lower left)9
An array of flat metal contacts arranged on the underside of the package.
Unlike BGA, an LGA package normally has lands rather than solder balls.
| Advantages | Disadvantages |
|---|---|
|
|
Table 15.
Ball Grid Array (BGA)¶
Figure 22. A grid array of solder balls on a printed circuit board after removal of an integrated circuit chip10
A package using an array of solder balls underneath the package.
Unlike perimeter-leaded packages, BGA connections can use the entire underside of the package.
| Advantages | Disadvantages |
|---|---|
|
|
Table 16.
Figure 23. Plastic ball grid array
A BGA using an organic/plastic package structure.
| Advantages | Disadvantages |
|---|---|
|
|
Table 17.
Figure 24. Ceramic ball grid array
A BGA using a ceramic package body or substrate.
| Advantages | Disadvantages |
|---|---|
|
|
Table 18.
Figure 25. Fine-pitch ball grid array
A BGA using a smaller ball pitch to increase I/O density and reduce package size. Common in memory and mobile electronics.
| Advantages | Disadvantages |
|---|---|
|
|
Table 19.
Figure 26. Micro ball grid array
A BGA using particularly small solder balls and pitch.
| Advantages | Disadvantages |
|---|---|
|
|
Table 20.
Figure 27. Intel Mobile Celeron in a flip-chip BGA package (FCBGA-479); the package substrate (dark yellow) and silicon die (dark blue) are visible11
A BGA in which the die is attached to the package substrate using bumps rather than conventional wire bonding. Particularly useful for processors, GPUs, FPGAs, networking devices, and other high-performance ICs.
| Advantages | Disadvantages |
|---|---|
|
|
Table 21.
Chip-Scale Packages¶
Chip-Scale Package (CSP)¶
Figure 28. Chip-scale package
A package whose footprint is approximately the same size as the die. A commonly used IPC definition limits a CSP to a package area no greater than approximately 1.2 times the die area.
CSP exists because conventional package bodies and leadframes can become much larger than the silicon they contain.
| Advantages | Disadvantages |
|---|---|
|
|
Table 22.
Wafer-Level Chip-Scale Package (WLCSP)¶
Figure 30. Top and bottom of a WL-CSP package sitting on the face of a U.S. penny, with a SOT23 package shown for comparison12
A package fabricated largely at wafer level before individual devices are singulated.
The package can be almost exactly the size of the silicon die.
| Advantages | Disadvantages |
|---|---|
|
|
Table 23.
Figure 31. Fan-in wafer-level chip-scale package
The package contacts remain within the footprint of the die.
| Advantages | Disadvantages |
|---|---|
|
|
Table 24.
Figure 32. Fan-out wafer-level package
Fan-out packaging extends the redistribution layer beyond the original die boundary, allowing external connections to occupy a larger area — solving fan-in WLCSP's key limitation, since external I/O no longer has to fit entirely over the die.
| Advantages | Disadvantages |
|---|---|
|
|
Table 25.
System-in-Package¶
System-in-Package (SiP)¶
Figure 33. CAD drawing of a SiP multi-chip module which contains a processor, memory and storage on a single substrate13
A system-in-package integrates multiple dies and/or passive components inside one package — for example, a processor, memory, RF circuitry, power management, and passive components together.
The key idea is that the system is assembled at the package level rather than placing every component independently on the PCB.
| Advantages | Disadvantages |
|---|---|
|
|
Table 26.
Multi-Chip Package (MCP)¶
Figure 34. Multi-chip package containing multiple dies
A package containing multiple semiconductor dies. A common example is combining memory dies or combining memory with a controller.
| Advantages | Disadvantages |
|---|---|
|
|
Table 27.
Multi-Chip Module (MCM)¶
Figure 35. A ceramic multi-chip module containing four POWER5 processor dice (center) and four 36 MB L3 cache dice (periphery)14
An assembly containing multiple bare or packaged dies mounted on a common substrate.
MCMs were an important predecessor to modern SiP and advanced packaging.
| Advantages | Disadvantages |
|---|---|
|
|
Table 28.
Package-in-Package (PiP)¶
Figure 36. Package-in-package architecture
One packaged IC is placed inside or integrated with another package.
| Advantages | Disadvantages |
|---|---|
|
|
Table 29.
Package-on-Package (PoP)¶
Figure 37. Typical logic-plus-memory PoP stack, common to mobile phone SoCs or baseband modems from 2005 onward15
Multiple packages are vertically stacked, with one package soldered directly on top of another — a common arrangement is a processor package underneath a memory package.
| Advantages | Disadvantages |
|---|---|
|
|
Table 30.
Direct Die and Bare-Die Packaging¶
Chip on Board (COB)¶
Figure 38. The PCB of a quartz watch. The clock IC is under the drop of black epoxy.16
In COB, the bare die is mounted directly on a PCB and connected using wire bonds or another interconnection method. The die is then protected using encapsulation.
| Advantages | Disadvantages |
|---|---|
|
|
Table 31.
Chip on Glass (COG)¶
Figure 39. Chip-on-glass display driver construction
A bare die mounted directly onto a glass substrate — commonly associated with display driver electronics, where the connections are made directly to the display glass.
| Advantages | Disadvantages |
|---|---|
|
|
Table 32.
Chip on Flex / Chip on Film (COF)¶
Figure 40. Chip mounted on a flexible substrate
A die attached directly to a flexible circuit or film — in the display industry this is specifically called COF (Chip-on-Film), where the driver IC sits on a flexible film attached to the display and can fold behind it.
| Advantages | Disadvantages |
|---|---|
|
|
Table 33.
Tape Automated Bonding (TAB)¶
Figure 41. Drawing of a tape-automated bonding carrier and definitions of various parts of the TAB assembly17
A technology in which the die is connected to conductive traces on a flexible tape.
TAB became particularly important for display driver ICs and high-volume electronics.
| Advantages | Disadvantages |
|---|---|
|
|
Table 34.
Beam-Lead Packages¶
Beam-Lead Package¶
Figure 42. Beam lead integrated circuits18
A bare semiconductor die with extended metal leads projecting directly from the die.
Beam-lead technology was an early attempt to eliminate bulky conventional package structures.
| Advantages | Disadvantages |
|---|---|
|
|
Table 35.
Ceramic and Hermetic Packages¶
Metal Can Package¶
Figure 43. Hermetic metal-can IC package
A cylindrical metal package derived from early transistor packaging. Typical examples include TO-style metal packages.
| Advantages | Disadvantages |
|---|---|
|
|
Table 36.
Ceramic Package¶
Figure 44. Ceramic semiconductor package
Ceramic packages use materials such as alumina or other engineered ceramics.
| Advantages | Disadvantages |
|---|---|
|
|
Table 37.
Ceramic Flat Package¶
Figure 45. Ceramic flatpack
A flat ceramic package with leads extending from the sides — historically important in military and aerospace electronics.
| Advantages | Disadvantages |
|---|---|
|
|
Table 38.
Ceramic Quad Flat Package (CQFP)¶
Figure 46. Ceramic quad flat package
A ceramic version of a quad flat package.
| Advantages | Disadvantages |
|---|---|
|
|
Table 39.
Hermetic Package¶
Figure 47. Hermetically sealed semiconductor package
A hermetic package forms a sealed environment around the semiconductor — used where moisture, gases, contaminants, or long-term environmental exposure must be tightly controlled.
| Advantages | Disadvantages |
|---|---|
|
|
Table 40.
Power IC Packages¶
Power semiconductor packages must solve a different problem from ordinary logic ICs: heat and current can dominate the package design.
TO Package¶
Figure 48. Transistor in a TO-5 package with 25 mm leads.19
The TO (Transistor Outline) family includes numerous mechanical package styles that have also been used for diodes, regulators, power transistors, sensors, and other semiconductor devices. Examples include TO-18, TO-92, TO-220, TO-247, and many others.
| Advantages | Disadvantages |
|---|---|
|
|
Table 41.
Figure 49. Small three-lead TO-style package
A small plastic through-hole package widely used for low-power transistors, sensors, and simple semiconductor devices.
Figure 50. TO-220 power semiconductor package
A larger through-hole package designed to provide a relatively efficient thermal path to a heatsink.
| Advantages | Disadvantages |
|---|---|
|
|
Table 42.
Power QFN¶
Figure 52. Power QFN package with exposed thermal pad
A QFN-style package optimized for power devices — a large exposed metal pad provides a low-resistance thermal path into the PCB.
| Advantages | Disadvantages |
|---|---|
|
|
Table 44.
Power BGA¶
Figure 53. Ball-grid-array package for power applications
A BGA architecture adapted for devices where both electrical current and thermal transfer are important, combining BGA's high I/O density with the added thermal/current-handling design considerations of a power device.
RF and Microwave Packages¶
RF packages must minimize parasitic capacitance and inductance while controlling electromagnetic behavior.
RF QFN¶
Figure 54. RF-oriented QFN package
A leadless package commonly used for RF transceivers, LNAs, mixers, switches, and other microwave circuits.
| Advantages | Disadvantages |
|---|---|
|
|
Table 45.
RF Ceramic Package¶
Figure 55. Ceramic RF package
Ceramic packages can provide excellent electrical characteristics and environmental stability for demanding RF applications.
| Advantages | Disadvantages |
|---|---|
|
|
Table 46.
Leaded Chip Carriers¶
Ceramic Leadless Chip Carrier (CLCC)¶
Figure 56. Ceramic leadless chip carrier
A ceramic leadless package with contacts around the perimeter, historically important in military, aerospace, and older EPROM-style applications.
Plastic Leaded Chip Carrier (PLCC)¶
Figure 57. Intel 80186 in QFJ68 / PLCC68, an example of a plastic leaded chip carrier20
A square package with J-shaped leads underneath its edges.
PLCC packages were widely used for microcontrollers, memory, logic, and programmable devices.
| Advantages | Disadvantages |
|---|---|
|
|
Table 47.
Array Packages¶
Column Grid Array (CGA)¶
Figure 58. Column grid array package
An area-array package using columns as the external interconnect, similar to BGA but using compliant solder columns rather than conventional solder balls — the columns can absorb some of the mechanical mismatch between the package and PCB.
| Advantages | Disadvantages |
|---|---|
|
|
Table 48.
Wafer-Level and Redistribution Packages¶
Wafer-Level Packaging (WLP)¶
Figure 60. A wafer-level package attached to a printed-circuit board21
A packaging approach in which significant portions of the packaging process are performed while the dies are still part of a wafer.
Traditional packaging generally follows:
WLP instead performs packaging operations before final singulation:
| Advantages | Disadvantages |
|---|---|
|
|
Table 49.
Redistribution Layer (RDL)¶
Figure 61. Redistribution layer routing die pads to new external locations
An RDL reroutes the original die pads to different locations, allowing the external connection pattern to be changed without redesigning the silicon.
RDL is a fundamental technology behind WLCSP and fan-out packaging.
| Advantages | Disadvantages |
|---|---|
|
|
Table 50.
Fan-Out Packaging (FOWLP)¶
Figure 62. Fan-out package with connections extending beyond the die22
Fan-out packaging places the external connections outside the original die footprint — the term fan-out refers to the electrical connections spreading outward from the die.
| Advantages | Disadvantages |
|---|---|
|
|
Table 51.
Panel-Level Packaging (PLP)¶
Figure 63. Panel-level packaging using a large rectangular processing panel
A variation of fan-out packaging in which packaging is performed on a large rectangular panel instead of a circular wafer.
| Advantages | Disadvantages |
|---|---|
|
|
Table 52.
Flip-Chip Packaging¶
Flip Chip¶
Figure 64. Side-view schematic of a typical flip-chip mounting23
In flip-chip assembly, the die is flipped upside down and electrically connected to the substrate using bumps.
This is fundamentally different from wire bonding, where the die remains face-up and wires extend from the die to the package.
| Advantages | Disadvantages |
|---|---|
|
|
Figure 65. Controlled-collapse-chip-connection flip-chip technology
A classic solder-bump flip-chip interconnection technology that enabled dense electrical connections between semiconductor dies and substrates.
Figure 66. Copper pillar interconnect
Copper pillars provide a fine-pitch alternative to traditional large solder bumps.
| Advantages | Disadvantages |
|---|---|
|
|
Table 53.
Underfill deserves a special mention: it isn't itself a package type, but is an important part of many flip-chip packages. A polymer fills the space beneath the die and around the bumps, helping distribute mechanical stress.
| Advantages | Disadvantages |
|---|---|
|
|
Table 54.
Advanced Substrate Packages¶
Organic Substrate Package¶
Figure 67. IC package using an organic substrate
Many modern BGAs use multilayer organic substrates to route signals between the die and package balls.
| Advantages | Disadvantages |
|---|---|
|
|
Table 55.
Build-Up Substrate¶
Figure 68. Multilayer build-up package substrate
A package substrate constructed from multiple fine-pitch wiring layers.
| Advantages | Disadvantages |
|---|---|
|
|
Table 56.
2.5D Packaging¶
Silicon Interposer¶
Figure 69. BGA with an interposer between the integrated circuit die to ball grid array24
A silicon interposer is a piece of silicon containing extremely dense wiring that connects multiple dies. The dies sit next to one another rather than directly on top of one another.
| Advantages | Disadvantages |
|---|---|
|
|
Table 57.
2.5D Integrated Circuit¶
Figure 70. Cross-sectional schematic comparing three integrated-circuit packaging approaches. 2D [Left]: one die is mounted on a package substrate and connected to the printed-circuit board (PCB). 2.5D [Center]: two dies sit side-by-side on a silicon interposer; signals reach the substrate through through-silicon vias (TSVs). 3D [Right]: two dies are stacked vertically and interconnected by TSVs, reducing footprint and wire length25
A 2.5D package places multiple dies side by side on an interposer or high-density substrate — sitting between traditional 2D packaging and true 3D die stacking.
| Advantages | Disadvantages |
|---|---|
|
|
Table 58.
3D IC Packaging¶
3D Die Stacking¶
Figure 71. One base die and three stacked dies26
3D packaging vertically stacks semiconductor dies, creating electrical connections vertically through the stack rather than only side-by-side.
| Advantages | Disadvantages |
|---|---|
|
|
Table 59.
Through-Silicon Via (TSV)¶
Figure 72. TSVs used by stacked DRAM-dice in combination with a High Bandwidth Memory (HBM) interface27
A TSV is a vertical electrical connection passing through silicon, used to connect vertically stacked dies — fundamental to many 3D packaging architectures.
| Advantages | Disadvantages |
|---|---|
|
|
Table 60.
Hybrid Bonding¶
Figure 73. Hybrid bonding between stacked semiconductor dies
Hybrid bonding directly connects fine-pitch metal structures and surrounding dielectric surfaces between dies, achieving much finer interconnect density than traditional solder bumps.
| Advantages | Disadvantages |
|---|---|
|
|
Table 61.
High-Bandwidth Memory Packaging¶
High Bandwidth Memory (HBM)¶
Figure 74. HBM DRAM die28
HBM stacks multiple memory dies vertically and connects them using dense vertical interconnects, commonly integrated with a processor or accelerator using a 2.5D interposer architecture.
| Advantages | Disadvantages |
|---|---|
|
|
Table 62.
Chiplet Packaging¶
Chiplet¶
Figure 75. Multiple chiplets integrated into a single package
A chiplet is a relatively small die designed to be integrated with other dies inside a package — instead of manufacturing an entire complex processor as one giant die, functionality is divided across multiple dies.
| Advantages | Disadvantages |
|---|---|
|
|
Table 63.
Chiplet Interconnect¶
Figure 76. High-density die-to-die interconnection between chiplets
Chiplets require an electrical interface between dies. Modern systems may use proprietary interfaces or standards such as UCIe for die-to-die communication.
The physical interconnect may be implemented using organic substrate traces, silicon interposers, bridges, RDL, hybrid bonding, or microbumps.
Embedded Die Packaging¶
Embedded Die Package¶
Figure 77. Semiconductor die embedded directly into package substrate material
An embedded-die package places one or more dies inside the package substrate or molding structure rather than simply mounting them on top.
| Advantages | Disadvantages |
|---|---|
|
|
Table 64.
Optical and Photonic Packages¶
Optoelectronic Package¶
Figure 78. Package integrating semiconductor electronics with optical components
Optoelectronic packages integrate electronic dies with optical components such as lasers, photodiodes, optical fibers, or photonic circuits.
| Advantages | Disadvantages |
|---|---|
|
|
Table 65.
Photonic Integrated Circuit Package¶
Figure 79. Package for a photonic integrated circuit
A package designed specifically to connect optical and electrical interfaces to a photonic integrated circuit.
| Advantages | Disadvantages |
|---|---|
|
|
Table 66.
Sensor and MEMS Packages¶
MEMS Package¶
Figure 80. MEMS sensor package with a specialized cavity
MEMS devices often require packages that provide a controlled mechanical or environmental interface — examples include accelerometers, gyroscopes, pressure sensors, microphones, and other inertial sensors.
| Advantages | Disadvantages |
|---|---|
|
|
Table 67.
Wafer-Level MEMS Package¶
Figure 81. MEMS device sealed at wafer level
A MEMS structure is sealed or capped at wafer level before the devices are separated.
| Advantages | Disadvantages |
|---|---|
|
|
Table 68.
Memory Packaging¶
Stacked Memory Package¶
Figure 82. Multiple memory dies stacked inside one package
Multiple memory dies are vertically stacked to increase capacity without increasing PCB footprint.
| Advantages | Disadvantages |
|---|---|
|
|
Table 69.
MCP Memory Package¶
Figure 83. Multi-chip package combining memory dies
An MCP can combine different memory technologies or multiple memory dies inside one package — common combinations historically include NAND and RAM.
Package Technologies by Interconnection Method¶
The physical package name and the internal die connection method are separate concepts.
Wire Bonding¶
Figure 84. Gold wire ball-bonded on a silicon die29
Wire bonding connects die pads to package leads or a package substrate using very fine wires. Common wire materials include gold, copper, and aluminum depending on the application and process.
| Advantages | Disadvantages |
|---|---|
|
|
Table 70.
Flip Chip and Hybrid Bonding are the other two major interconnection methods
Both already have their own full sections — see Flip-Chip Packaging and Hybrid Bonding — rather than repeating them here.
Package Construction Materials¶
Plastic / Molded Package¶
Figure 85. Molded plastic semiconductor package
The die and its connections are encapsulated in an epoxy molding compound — the dominant construction for many low-cost consumer and industrial ICs.
| Advantages | Disadvantages |
|---|---|
|
|
Table 71.
Epoxy Molded Compound (EMC)¶
Figure 86. Epoxy molding compound surrounding semiconductor die
EMC is used to encapsulate semiconductor dies and protect internal structures. It is not itself a package outline, but it is fundamental to many plastic semiconductor packages.
System-on-Package¶
Figure 87. System-level integration at the package level
System-on-package describes architectures where substantial system functionality is implemented inside the package — conceptually broader than simply placing multiple identical dies together, and distinct from SiP in that it emphasizes system-level design happening at the package level rather than just multi-die integration.
Why So Many Package Types Exist¶
There is no universally "best" IC package because every application has different requirements.
Size — Wearables and smartphones need extremely small packages, driving technologies such as WLCSP, FOWLP, CSP, QFN, SiP, and 3D stacking.
I/O Count — A simple temperature sensor may need only a few connections, while a GPU can require thousands. Low-I/O devices can use SOT, DIP, SOIC, or QFN; high-I/O devices may require BGA, FCBGA, LGA, 2.5D interposers, or 3D packaging.
Thermal Performance — As semiconductor power increases, the package must remove more heat, driving exposed-pad QFN, Power QFN, BGA, FCBGA, ceramic packages, heat spreaders, 2.5D packages, and advanced 3D thermal solutions.
Electrical Performance — High-speed signals cannot tolerate excessive parasitic inductance and capacitance, favoring QFN, LGA, BGA, flip chip, RDL, silicon interposers, and hybrid bonding.
Cost — Consumer electronics may require millions of inexpensive packages, favoring plastic packages, leadframes, wire bonding, and high-volume WLP. Specialized aerospace or high-reliability electronics may instead justify ceramic packages, hermetic packages, and specialized substrates.
Reliability — Different environments require different packaging. A consumer device may prioritize low cost and small size, while an aerospace device may prioritize hermetic sealing, temperature stability, and long-term reliability.
Manufacturing — A package must also be compatible with the manufacturing equipment available to assemble it, creating a tradeoff between package performance, package complexity, and manufacturing cost.
Package Evolution¶
The broad evolution of IC packaging can be summarized as:
DIP / Through-Hole
↓
SOP / SOIC
↓
QFP / PLCC
↓
QFN / LGA
↓
BGA
↓
CSP / WLCSP
↓
Flip-Chip
↓
Fan-Out
↓
SiP / Multi-Chip
↓
2.5D Interposer
↓
3D Stacking
↓
Chiplets / Advanced 3D Integration
This is not a strict replacement chain. Older packages continue to exist because they remain advantageous for particular cost, reliability, assembly, or electrical requirements.
Package Selection Guide¶
| Requirement | Common Choices |
|---|---|
| Cheapest simple IC | DIP, SOIC, SOT |
| Easy hand soldering | DIP, SOIC, larger QFP |
| Small MCU | QFN, TSSOP, LQFP |
| Very small sensor | WLCSP, CSP, DFN |
| RF IC | QFN, LGA, RF ceramic |
| Power management | Power QFN, SOIC, BGA |
| High pin count | QFP, BGA |
| Very high pin count | BGA, FCBGA |
| CPU / GPU | FCBGA |
| High-bandwidth memory | 2.5D / 3D / HBM |
| Multiple dies | MCP, SiP |
| Processor + memory | PoP, SiP |
| Extremely small mobile device | WLCSP, FOWLP, SiP |
| Harsh environment | Ceramic, hermetic |
| Aerospace / high reliability | Ceramic, hermetic, specialized BGA |
| Flexible electronics | COF, TAB |
| Display driver | COG, COF |
| Extreme die-to-die bandwidth | 2.5D, 3D, hybrid bonding |
| Chiplet architecture | 2.5D, advanced substrate, 3D |
Table 72.
Important Package Terminology¶
Die — The actual piece of semiconductor containing the integrated circuit.
Package — The structure surrounding and connecting the die.
Lead — A conductive external connection extending from a package.
Pad — A flat conductive contact used for bonding or soldering.
Ball — A solder connection used by BGA-style packages.
Bump — A small conductive structure used for flip-chip or other advanced interconnections.
Substrate — A package-level circuit board that routes signals between the die and external package connections.
Interposer — A high-density intermediate layer used to connect dies to one another or to the package substrate.
RDL — Redistribution layer that moves electrical connections from their original die locations to new external locations.
TSV — Through-silicon via used for vertical electrical connections through silicon.
Underfill — Material placed beneath flip-chip dies to improve mechanical reliability.
Heat Spreader — A metal structure that distributes heat from the die over a larger area.
Heat Sink — An external thermal structure that removes heat from the package.
Mold Compound — Protective material surrounding the die and internal connections.
Hermetic Seal — A package seal designed to prevent significant exchange of gases or moisture with the environment.
Useful Resources¶
- IEEE Technology Navigator — Chip-Scale Packaging — overview of CSP technology and package architectures
- SK hynix — Semiconductor Packaging — overview of conventional, wafer-level, flip-chip, RDL, and TSV packaging
- SK hynix — Wafer-Level Packaging — fan-in, fan-out, RDL, flip-chip, and TSV technologies
- Analog Devices — Flip-Chip and Chip-Scale Packaging — CSP and flip-chip fundamentals
- Siemens — IC Package Types — overview of conventional and advanced package types
-
Wikipedia contributors. (n.d.). Dual in-line package. Wikipedia. https://en.wikipedia.org/wiki/Dual_in-line_package ↩↩↩
-
Wikipedia contributors. (n.d.). SIPP memory. Wikipedia. https://en.wikipedia.org/wiki/SIPP_memory ↩
-
Wikipedia contributors. (n.d.). Zig-zag in-line package. Wikipedia. https://en.wikipedia.org/wiki/Zig-zag_in-line_package ↩
-
Wikipedia contributors. (n.d.). Pin grid array. Wikipedia. https://en.wikipedia.org/wiki/Pin_grid_array ↩↩↩
-
Wikipedia contributors. (n.d.). Small outline integrated circuit. Wikipedia. https://en.wikipedia.org/wiki/Small_outline_integrated_circuit ↩↩
-
Wikipedia contributors. (n.d.). Thin shrink small outline package. Wikipedia. https://en.wikipedia.org/wiki/Thin_shrink_small_outline_package ↩
-
Wikipedia contributors. (n.d.). Quad flat package. Wikipedia. https://en.wikipedia.org/wiki/Quad_flat_package ↩↩↩
-
Wikipedia contributors. (n.d.). Flat no-leads package. Wikipedia. https://en.wikipedia.org/wiki/Flat_no-leads_package ↩
-
Wikipedia contributors. (n.d.). Land grid array. Wikipedia. https://en.wikipedia.org/wiki/Land_grid_array ↩
-
Wikipedia contributors. (n.d.). Ball grid array. Wikipedia. https://en.wikipedia.org/wiki/Ball_grid_array ↩
-
Wikipedia contributors. (n.d.). Flip chip. Wikipedia. https://en.wikipedia.org/wiki/Flip_chip ↩
-
Wikipedia contributors. (n.d.). Chip-scale package. Wikipedia. https://en.wikipedia.org/wiki/Chip-scale_package ↩
-
Wikipedia contributors. (n.d.). System in a package. Wikipedia. https://en.wikipedia.org/wiki/System_in_a_package ↩
-
Wikipedia contributors. (n.d.). Multi-chip module. Wikipedia. https://en.wikipedia.org/wiki/Multi-chip_module ↩
-
Wikipedia contributors. (n.d.). Package on a package. Wikipedia. https://en.wikipedia.org/wiki/Package_on_a_package ↩
-
Wikipedia contributors. (n.d.). Chip on board. Wikipedia. https://en.wikipedia.org/wiki/Chip_on_board ↩
-
Wikipedia contributors. (n.d.). Tape-automated bonding. Wikipedia. https://en.wikipedia.org/wiki/Tape-automated_bonding ↩
-
Wikipedia contributors. (n.d.). Beam lead technology. Wikipedia. https://en.wikipedia.org/wiki/Beam_lead_technology ↩
-
Wikipedia contributors. (n.d.). TO-5. Wikipedia. https://en.wikipedia.org/wiki/TO-5 ↩
-
Wikipedia contributors. (n.d.). Chip carrier. Wikipedia. https://en.wikipedia.org/wiki/Chip_carrier ↩
-
Wikipedia contributors. (n.d.). Wafer-level packaging. Wikipedia. https://en.wikipedia.org/wiki/Wafer-level_packaging ↩
-
Wikipedia contributors. (n.d.). Fan-out wafer-level packaging. Wikipedia. https://en.wikipedia.org/wiki/Fan-out_wafer-level_packaging ↩
-
Wikipedia contributors. (n.d.). Flip chip. Wikipedia. https://en.wikipedia.org/wiki/Flip_chip ↩
-
Wikipedia contributors. (n.d.). Interposer. Wikipedia. https://en.wikipedia.org/wiki/Interposer ↩
-
Wikipedia contributors. (n.d.). 2.5D integrated circuit. Wikipedia. https://en.wikipedia.org/wiki/2.5D_integrated_circuit ↩
-
Wikipedia contributors. (n.d.). Three-dimensional integrated circuit. Wikipedia. https://en.wikipedia.org/wiki/Three-dimensional_integrated_circuit ↩
-
Wikipedia contributors. (n.d.). Through-silicon via. Wikipedia. https://en.wikipedia.org/wiki/Through-silicon_via ↩
-
Wikipedia contributors. (n.d.). High Bandwidth Memory. Wikipedia. https://en.wikipedia.org/wiki/High_Bandwidth_Memory ↩
-
Wikipedia contributors. (n.d.). Wire bonding. Wikipedia. https://en.wikipedia.org/wiki/Wire_bonding ↩






















































































